Method for forming silicon-phosphorous materials

ABSTRACT

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR′z, where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Appl. No. 62/864,260, filed onJun. 20, 2019, which is herein incorporated by reference.

BACKGROUND Field

Embodiments of the present disclosure generally relate to the field ofsemiconductor manufacturing, display technology, and other microelectronic industries, and more specifically, to methods for depositingsilicon-containing materials.

Description of the Related Art

As smaller and more complex electronic devices are manufactured, betterdoping of dielectric and crystalline materials for a variety ofapplications are needed to enhance device performance. The desired setsof properties of phosphorous and arsenic containing silicon-basedmaterials are becoming more difficult to achieve due to the evolvingprocessing limitations of the micro electronic industry. For example,selective area deposition of epitaxial silicon or silicon-containingmaterials having a high level of strain and a low resistivity has becomedifficult at lower temperatures (less than 500° C.). In some cases,conformal dielectric films having uniform doping over high aspect ratiofeatures are challenging. Also, although lower temperatures aredesirable during the deposition, the growth rate and active dopantlevels of the deposited film undesirably reduces at the lowertemperatures. Doping profile control is also difficult due to thediffusion of the dopant (e.g., P or As) during thermal process steps.

Therefore, improved methods for depositing silicon-containing materialsare desired.

SUMMARY OF THE INVENTION

Embodiments generally relate to methods for depositingsilicon-phosphorous materials, and more specifically, relate to usingsilicon-phosphorous compounds in vapor deposition processes to depositsilicon-phosphorous materials.

In one or more embodiments, a method for forming a silicon-phosphorousmaterial on a substrate is provided and includes exposing the substrateto a deposition gas containing one or more silicon-phosphorous compoundsduring a deposition process and depositing a film containing thesilicon-phosphorous material on the substrate. The silicon-phosphorouscompound has the chemical formula:

[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z),

where each instance of R is independently an alkyl or a halogen, eachinstance of R′ is independently an alkyl or a halogen, n is 0, 1, or 2;v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2;and z is 0, 1, or 2, where x+y+z=3.

In some embodiments, a method for forming a silicon-phosphorous materialon a substrate is provided and includes exposing the substrate in theprocessing chamber to the deposition gas containing one or moresilicon-phosphorous compounds during an epitaxy or epitaxial process andselectively depositing the film containing the silicon-phosphorousmaterial on the substrate. The substrate can be heated to a temperatureof about 400° C. to about 700° C. and the processing chamber can bemaintained at a pressure of about 20 Torr to about 600 Torr.

In other embodiments, a method for forming a silicon-phosphorousmaterial on a substrate is provided and includes exposing the substratein the processing chamber to the deposition gas containing one or moresilicon-phosphorous compounds during an atomic layer deposition (ALD)process and depositing the film containing the silicon-phosphorousmaterial on the substrate. The substrate can be heated to a temperatureof about 100° C. to less than 400° C. and the processing chamber ismaintained at a pressure of about 100 Torr or less.

In one or more embodiments, a computer program product residing on acomputer-readable medium is provided and includes instructions forcausing a processor to perform one or more methods for formingsilicon-phosphorous materials on substrates, as described and discussedherein.

DETAILED DESCRIPTION

Embodiments generally relate to methods for depositingsilicon-phosphorous materials, and more specifically, relate to usingsilicon-phosphorous compounds in vapor deposition processes to depositsilicon-phosphorous materials. The silicon-phosphorous compound includesat least one silicon-phosphorous bond that is preserved in thesilicon-phosphorous material deposited or otherwise formed by depositionprocesses described and discussed herein. The layers or films containingthe silicon-phosphorous material are deposited, grown, formed, orotherwise produced on one or more features disposed on the substrate.Exemplary features can be or include one or more source-drain features,one or more source-drain extensions, or other devices or features.

Some of the beneficial aspects provided by embodiments described anddiscussed here include: a relatively fast growth rate of thesilicon-phosphorous materials; a relatively low deposition temperature(e.g., less than 500° C., such as 450° C. or 400° C.); a relative highconcentration of phosphorous in the silicon-phosphorous materials whichprovides a relative low resistivity value of the silicon-phosphorousmaterials; and a stabilized phosphorus in the silicon-phosphorousmaterials (reduced phosphorous diffusion) due to the initialsilicon-phosphorus bond in the silicon-phosphorous compound orprecursor.

In one or more embodiments, a method for forming a silicon-phosphorousmaterial on a substrate is provided and includes exposing the substrateto a deposition gas containing one or more silicon-phosphorous compoundsduring a deposition process and depositing a film containing thesilicon-phosphorous material on the substrate. The deposition processcan be one or more vapor deposition processes which are thermalprocesses or plasma processes. Exemplary vapor deposition processes canbe or include an epitaxy, epitaxial, or atomic layer epitaxy (ALE)process, an atomic layer deposition (ALD) process, a plasma-enhanced ALD(PE-ALD) process, a chemical vapor deposition (CVD) process, aplasma-enhanced CVD (PE-CVD) process, or a plasma process thereof.

The silicon-phosphorous compound contains one or more silicon atoms, oneor more phosphorous atoms, and one or more silicon-phosphorous bonds.Each silicon atom can be bonded to one or more hydrogen atoms, one ormore organic groups, one or more halogen atoms, or a combinationthereof. Similarly, each phosphorous atom can be bonded to one or morehydrogen atoms, one or more organic groups, one or more halogen atoms,or any combination thereof. The organic groups can be or include one ormore alkyls, alkenes, alkynes, benzyls or aryls, as well as otherfunctionalized organic groups. The halogen atoms can be fluorine,chlorine, bromine, iodine, or any combination thereof.

In some embodiments, the silicon-phosphorous compounds can be ex-situthe processing chamber. For example, a silicon-phosphorous compound canbe acquired, purchased, or synthesized and then directly introduced intothe processing chamber. Alternatively, in other embodiments, thesilicon-phosphorous compounds can be in-situ the processing chamber. Forexample, one, two, or more precursors (e.g., one or more silanes oralkyl silanes and one or more phosphines or alkyl phosphines) can beinjected into the processing chamber to produce the silicon-phosphorouscompound therein. In one or more examples, one or more silicon sources(e.g., silane, disilane, trisilane, tetrasilane, methylsilane,tert-butylsilane, or any combination thereof) are combined with one ormore phosphorous sources (e.g., trichlorophosphine (PCl₃)) to producethe silicon-phosphorous compound. The silicon-phosphorous compound canbe produced in-situ the processing chamber prior to and/or during thedeposition process. Silicon-phosphorous compounds or precursors usefulin embodiments described and discussed herein, as well as synthesisprocesses useful for producing such compounds, are further described anddiscussed in the article G. Fritz, et al., Silylphosphanes: Developmentsin Phosphorous Chemistry, Chem. Rev. 2000, 100, 3341-3401, which isherein incorporated by reference in its entirety.

In one or more embodiments, the silicon-phosphorous compound has thechemical formula:

[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z),

where each instance of R is independently an organic group (e.g., alkyl)or a halogen atom (e.g., F, Cl, Br, or I), each instance of R′ isindependently an organic group (e.g., alkyl) or a halogen atom (e.g., F,Cl, Br, or I), n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; xis 1, 2, or 3; y is 0, 1, or 2; and z is 0, 1, or 2, where x+y+z=3. Eachinstance of R is independently selected from methyl, ethyl, propyl,butyl, pentyl, any isomer of these alkyls, fluoride, chloride, bromide,or iodide. Each instance of R′ is independently selected from methyl,ethyl, propyl, butyl, pentyl, any isomer of these alkyls, fluoride,chloride, bromide, or iodide. In one or more examples, each instance ofR and each instance of R′ are independently selected from methyl, ethyl,propyl, butyl, pentyl, or isomers thereof. In some examples, eachinstance of R and each instance of R′ are independently selected frommethyl, ethyl, n-propyl, iso-propyl, n-butyl, sec-butyl, tert-butyl,n-pentyl, sec-pentyl, iso-pentyl, tert-pentyl, neo-pentyl, 3-pentyl, orsec-isopentyl.

In some embodiments, n is 0 and the silicon-phosphorous compound has thechemical formula (R_(3-v)H_(v)Si)_(x)PH_(y)R′_(z). In some examples, nis 0 and x is 1, and the silicon-phosphorous compound has the chemicalformula (R_(3-v)H_(v)Si)PH_(y)R′_(z). Exemplary chemical formulas of thesilicon-phosphorous compound when n is 0 and x is 1 include R₃Si—PR′₂;R₃Si—PHR′; R₃Si—PH₂; R₂HSi—PR′₂; R₂HSi—PHR′; R₂HSi—PH₂, RH₂Si—PR′₂;RH₂Si—PHR′; RH₂Si—PH₂; H₃Si—PR′₂; H₃Si—PHR′; or H₃Si—PH₂. Thesilicon-phosphorous compound can be or include one compound or a mixtureof two or more compounds wherein each compound has a different chemicalformula. In some examples, the silicon-phosphorous compound can be orinclude one or more of the following compounds: H₃Si—PH₂; Me₂HSi—PH₂;MeEtHSi—PH₂; Me₂HSi—PHMe; tBuMe₂Si—PH₂; Me₂HSi—PH(tBu); tBu₂HSi—PH₂;H₃Si—PMe₂; H₃Si—PEt₂; H₃Si—P(iPr)₂; H₃Si—P(tBu)₂; Cl₃Si—PMe₂;Cl₃Si—PEt₂; Cl₃Si—P(iPr)₂, Cl₃Si—P(tBu)₂; Br₃Si—PMe₂; Br₃Si—PEt₂;Br₃Si—P(iPr)₂; Br₃Si—P(tBu)₂; BrCl₂Si—PMe₂; Cl₃Si—PHMe;ClBr₂Si—PMe(tBu), ICl₂Si—PMe₂; Cl₃Si—PEt₂; ClBr₂Si—P(iPr)H,I₃Si—PH(tBu), ClBr₂Si—PHMe, Br₂HSi—PHEt; Br₂MeSi—PMe(iPr), ClMe₂Si—PMe₂;H₃Si—PCl₂, Me₂HSi—PHCl; MeEtHSi—PBr₂; Me₂HSi—PMeCl, tBuMe₂Si—PClBr,ClH₂Si—PCl₂, Me₂ClSi—PHCl, MeClHSi—PBr₂; BrMeHSi—PMeCl, ortBuCl₂Si—PClBr.

In other embodiments, n is 1 and the silicon-phosphorous compound hasthe chemical formula[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z). In someexamples, n is 1 and x is 1, and the silicon-phosphorous compound hasthe chemical formula (R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)—PH_(y)R′_(z).Exemplary chemical formulas of the silicon-phosphorous compound when nis 1 and x is 1 include R₃Si—(R₂Si)—PR′₂; R₃Si—(R₂Si)—PHR′;R₃Si—(R₂Si)—PH₂; R₂HSi—(R₂Si)—PR′₂; R₂HSi—(R₂Si)—PHR′; R₂HSi—(R₂Si)—PH₂;RH₂Si—(R₂Si)—PR′₂; RH₂Si—(R₂Si)—PHR′; RH₂Si—(R₂Si)—PH₂;H₃Si—(R₂Si)—PR′₂; H₃Si—(R₂Si)—PHR′; H₃Si—(R₂Si)—PH₂; R₃Si—(H₂Si)—PR′₂;R₃Si—(H₂Si)—PHR′; R₃Si—(H₂Si)—PH₂; R₂HSi—(H₂Si)—PR′₂; R₂HSi—(H₂Si)—PHR′;R₂HSi—(H₂Si)—PH₂; RH₂Si—(H₂Si)—PR′₂; RH₂Si—(H₂Si)—PHR′;RH₂Si—(H₂Si)—PH₂; H₃Si—(H₂Si)—PR′₂; H₃Si—(H₂Si)—PHR′; H₃Si—(H₂Si)—PH₂;R₃Si—(RHSi)—PR′₂; R₃Si—(RHSi)—PHR′; R₃Si—(RHSi)—PH₂; R₂HSi—(RHSi)—PR′₂;R₂HSi—(RHSi)—PHR′; R₂HSi—(RHSi)—PH₂; RH₂Si—(RHSi)—PR′₂;RH₂Si—(RHSi)—PHR′; RH₂Si—(RHSi)—PH₂; H₃Si—(RHSi)—PR′₂; H₃Si—(RHSi)—PHR′;or H₃Si—(RHSi)—PH₂.

In one or more embodiments, silicon-phosphorous compound has twosilicon-phosphorous bonds (Si—P), such that two silicon atoms aredirectly bonded to one phosphorous atom. For example, x is 2; y is 0 or1; and z is 0 or 1, where y+z=1, and the silicon-phosphorous compoundhas the chemical formula[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]₂PH_(y)R′_(z). In some examples,the silicon-phosphorous compound can have any one of the following thechemical formulas, such as [(R_(3-v)H_(v)Si)—(R_(2-x) H_(w)Si)_(n)]₂PR′,[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]₂PH, (R_(3-v)H_(v)Si)₂PR′, or(R_(3-v)H_(v)Si)₂PH.

In other embodiments, silicon-phosphorous compound has threesilicon-phosphorous bonds, such that three silicon atoms are directlybonded to one phosphorous atom. For example, x is 3; y is 0; and z is 0,and the silicon-phosphorous compound has the chemical formula[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]₃P. In some examples, when n is0, the silicon-phosphorous compound has the chemical formula(R_(3-v)H_(v)Si)₃P.

In one or more embodiments, besides including the silicon-phosphorouscompound, the deposition gas can also contain one or more silicon sourcegases, one or more phosphorous source gases, one or more dopant sourcegases (e.g., arsenic or antimony), one or more etchant gases, one ormore carrier gases, or any combination thereof. For example, in aselective epitaxy deposition, the deposition gas contains thesilicon-phosphorous compound, one or more silicon source gases, one ormore phosphorous source gases, optionally one or more arsenic sourcegases, one or more antimony source gases, one or more etchant gases, andone or more carrier gases.

The silicon source gas can be or include silane, disilane, trisilane,tetrasilane, pentasilane, chlorosilane, dichlorosilane, trichlorosilane,tetrachlorosilane, hexachlorodisilane, tetraethyl orthosilicate (TEOS),or any combination thereof. The phosphorous source gas can be or includephosphine, trichlorophosphine, methylphosphine, ethylphosphine,propylphosphine, butylphosphine, dimethylphosphine, diethylphosphine,dipropylphosphine, dibutylphosphine, trimethylphosphine,triethylphosphine, tripropylphosphine, tributylphosphine, alkyl isomersthereof, adducts thereof, or any combination thereof. If the dopant isarsenic, then the arsenic source gas can be or include arsine,methylarsine, ethylarsine, propylarsine, butylarsine, dimethylarsine,diethylarsine, dipropylarsine, dibutylarsine, trimethylarsine,triethylarsine, tripropylarsine, tributylarsine, alkyl isomers thereof,adducts thereof, or any combination thereof. If the dopant is antimony,then the antimony source gas can be or include trimethylantimony,triethylantimony, tripropylantimony, tris(dimethylamino)antimony,tris(diethylamino)antimony, antimony trichloride, antimony triiodide,antimony pentafluoride, antimony pentachloride, antimony(III)n-butoxide, antimony(III) ethoxide, or any combination thereof. Theetchant gas can be or include chlorine (Cl₂), hydrogen chloride, analkylchloride (e.g., methylchloride, methylene chlorine, carbontetrachloride), boron trichloride, chlorotrifluoride, hydrogen fluoride,fluorine (F₂), adducts thereof, plasmas thereof, or any combinationsthereof. The carrier gas can be or include hydrogen (H₂), nitrogen (N₂),forming gas (e.g., a mixture containing at least hydrogen and nitrogen),argon, helium, or any combination thereof.

In one or more embodiments, a method for forming a silicon-phosphorousmaterial on a substrate is provided and includes exposing the substratein a processing chamber to a deposition gas containing one or moresilicon-phosphorous compounds during an epitaxy or epitaxial process andselectively depositing a film containing the silicon-phosphorousmaterial on the substrate. The substrate can be positioned or otherwisecontained in a processing chamber, such as an epitaxy chamber or CVDchamber, during the deposition process. The substrate can be heated toand/or maintained at a temperature of about 400° C., about 450° C., orabout 500° C. to about 550° C., about 600° C., about 650° C., or about700° C. during the deposition process. The processing chamber can bepressurized to and/or maintained at a pressure of about 20 Torr, about50 Torr, about 80 Torr, about 100 Torr or about 150 Torr to about 200Torr, about 250 Torr, about 300 Torr, about 400 Torr, about 500 Torr,about 600 Torr, or greater during the deposition process. In one or moreexamples, the substrate is heated to and/or maintained at a temperatureof about 400° C. to about 700° C. and the processing chamber ispressurized to and/or maintained at a pressure of about 20 Torr to about600 Torr during the deposition process.

In other embodiments, a method for forming a silicon-phosphorousmaterial on a substrate is provided and includes exposing the substratein a processing chamber to a deposition gas containing one or moresilicon-phosphorous compounds during an ALD process and depositing afilm containing the silicon-phosphorous material on the substrate. Thesubstrate can be positioned or otherwise contained in a processingchamber, such as an ALD chamber, during the deposition process. Thesubstrate can be heated to and/or maintained at a temperature of about50° C., about 100° C., or about 150° C. to about 200° C., about 250° C.,about 300° C., about 350° C., about 375° C., about 390° C., or less thanabout 400° C. during the deposition process. The processing chamber canbe pressurized to and/or maintained at a pressure of about 0.001 Torr,about 0.01 Torr, or about 0.1 Torr to about 1 Torr, about 10 Torr, orabout 100 Torr during the deposition process. In one or more examples,the substrate is maintained at a temperature of about 100° C. to lessthan 400° C. during the deposition process, and the processing chamberis maintained at a pressure of about 100 Torr or less during thedeposition process.

In some embodiments, the deposition process can be controlled todeposit, grow, or otherwise produce one or more dielectric materialswhich include or contain the silicon-phosphorous material. For example,the silicon-phosphorous material can be or include silicon, phosphorous,oxygen, carbon, and nitrogen. In some examples, the silicon-phosphorousmaterial can also include one or more dopants, such as arsenic,antimony, germanium, boron, or any combination thereof.

The deposited film or layer containing the silicon-phosphorous materialcan be deposited at a rate in a range from about 10 Å/min, about 20Å/min, about 50 Å/min, or about 100 Å/min to about 150 Å/min, about 300Å/min, about 500 Å/min, about 1,000 Å/min, about 1,500 Å/min, about2,000 Å/min, such as, for example, from about 10 Å/min to about 2,000Å/min. The silicon-phosphorous material can have a phosphorousconcentration of about 1×10²⁰ atoms/cm³, about 5×10²⁰ atoms/cm³, orabout 1×10²¹ atoms/cm³ to about 5×10²¹ atoms/cm³, about 1×10²²atoms/cm³, or about 5×10²² atoms/cm³. For example, thesilicon-phosphorous material can have a phosphorous concentration in arange from about 1×10²⁰ atoms/cm³ to about 5×10²² atoms/cm³, about1×10²⁰ atoms/cm³ to about 1×10²² atoms/cm³, or about 1×10²¹ atoms/cm³ toabout 1×10²² atoms/cm³. The silicon-phosphorous material can have anarsenic concentration and/or another dopant concentration of about1×10²⁰ atoms/cm³, about 5×10²⁰ atoms/cm³, or about 1×10²¹ atoms/cm³ toabout 5×10²¹ atoms/cm³, about 1×10²² atoms/cm³, or about 5×10²²atoms/cm³. For example, the silicon-phosphorous material can have anarsenic concentration and/or another dopant concentration in a rangefrom about 1×10²⁰ atoms/cm³ to about 5×10²² atoms/cm³, about 1×10²⁰atoms/cm³ to about 1×10²² atoms/cm³, or about 1×10²¹ atoms/cm³ to about1×10²² atoms/cm³.

The methods or processes described and disclosed herein may be performedin processing chambers configured to grow, form, deposit, or otherwiseproduce materials on substrates. It is understood that depositingsilicon-phosphorous material, silicon, or other silicon materials on amonocrystalline silicon material to form an epitaxial layer ofsilicon-phosphorous material, silicon, or doped silicon thereon is knownas growing an epitaxial layer. In one or more embodiments, theprocessing chambers are CENTURA® RP EPI chambers and PRODUCER® CVDchambers, commercially available from Applied Materials, Inc., of SantaClara, Calif.

Benefits of the disclosure include deposition, formation, growth, orotherwise production of silicon-phosphorous materials as epitaxiallayers/films, which can be used to form source and drain extensions withuniform doping at relatively low temperatures and with no ion implantdamage and/or amorphization of the channel of the fin structure. Furtherbenefits of the disclosure include the deposition, formation, growth, orotherwise production of silicon-phosphorous materials in or on sourceand drain extensions, source and drain features, contacts to the sourceand drain features. Other beneficial aspects provided by embodimentsdescribed and discussed here include: a relatively fast growth rate ofthe silicon-phosphorous materials; a relatively low depositiontemperature (e.g., less than 500° C., such as about 450° C. or about400° C.); a relative high concentration of phosphorous in thesilicon-phosphorous materials which provides a relative low resistivityvalue of the silicon-phosphorous materials; and a stabilized phosphorusin the silicon-phosphorous materials (reduced phosphorous diffusion) dueto the initial silicon-phosphorus bond in the silicon-phosphorouscompound or precursor. In some examples, a relatively low depositiontemperature of less than 500° C., can be about 400° C., about 420° C.,about 435° C., or about 450° C. to about 460° C., about 480° C., about490° C., or about 495° C.

In one or more embodiments, to facilitate control of a processingchamber for performing the methods describe and discussed herein (e.g.,method for forming a silicon-phosphorous material on a substrate), acontroller (not shown) can be one of any form of general-purposecomputer processor that can be used in an industrial setting forcontrolling various processing chambers and sub-processors. The memory,or computer-readable medium (CRM), of a central processing unit (CPU)may be one or more of readily available memory such as random accessmemory (RAM), read only memory (ROM), floppy disk, hard disk, or anyother form of digital storage, local or remote (not shown). The supportcircuits are coupled to the CPU for supporting the processor in aconventional manner. These circuits include cache, power supplies, clockcircuits, input/output circuitry and subsystems, and the like (notshown).

The methods described and discussed herein may generally be stored inthe memory as a computer program product or a software routine that,when executed by the CPU, causes the processing chamber to performprocesses or methods described and discussed herein. The computerprogram product or software routine may also be stored and/or executedby a second CPU (not shown) that is remotely located from the hardwarebeing controlled by the CPU. Some or all of the method may also beperformed in hardware. As such, embodiments of the method may beimplemented in software and executed using a computer system, inhardware as, e.g., an application specific integrated circuit or othertype of hardware implementation, or as a combination of software andhardware. The computer program product or software routine may beexecuted after the substrate is positioned on the substrate supportpedestal. The computer program product or software routine, whenexecuted by the CPU, transforms the general purpose computer into aspecific purpose computer (controller) that controls the chamberoperation such that the methods described and disclosed herein areperformed.

In one or more embodiments, the computer program product or softwareroutine is residing on the CRM, and the computer program product orsoftware routine includes instructions for causing the processor toperform one or more methods for forming the silicon-phosphorous materialon the substrate as described and disclosed herein.

Embodiments of the present disclosure further relate to any one or moreof the following paragraphs 1-32:

1. A method for forming a silicon-phosphorous material on a substrate,comprising: exposing the substrate to a deposition gas comprising asilicon-phosphorous compound during a deposition process; and depositinga film comprising the silicon-phosphorous material on the substrate,wherein the silicon-phosphorous compound has the chemical formula:[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z), and wherein:each instance of R is independently an alkyl or a halogen; each instanceof R′ is independently an alkyl or a halogen; n is 0, 1, or 2; v is 0,1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; and z is0, 1, or 2; wherein x+y+z=3.

2. A method for forming a silicon-phosphorous material on a substrate,comprising: exposing the substrate in a processing chamber to adeposition gas comprising a silicon-phosphorous compound during anepitaxial process; and selectively depositing a film comprising thesilicon-phosphorous material on the substrate, wherein the substrate isheated to a temperature of about 400° C. to about 700° C., wherein theprocessing chamber is maintained at a pressure of about 20 Torr to about600 Torr; wherein the silicon-phosphorous compound has the chemicalformula: [(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(x)]_(x)PH_(y)R′_(z), andwherein: each instance of R is independently an alkyl or a halogen; eachinstance of R′ is independently an alkyl or a halogen; n is 0, 1, or 2;v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2;and z is 0, 1, or 2; wherein x+y+z=3.

3. A method for forming a silicon-phosphorous material on a substrate,comprising: exposing the substrate in a processing chamber to adeposition gas comprising a silicon-phosphorous compound during anatomic layer deposition process; and depositing a film comprising thesilicon-phosphorous material on the substrate, wherein the substrate isheated to a temperature of about 100° C. to less than 400° C., whereinthe processing chamber is maintained at a pressure of about 100 Torr orless; wherein the silicon-phosphorous compound has the chemical formula:[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z), and wherein:each instance of R is independently an alkyl or a halogen; each instanceof R′ is independently an alkyl or a halogen; n is 0, 1, or 2; v is 0,1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; and z is0, 1, or 2; wherein x+y+z=3.

4. The method according to any one of paragraphs 1-3, wherein eachinstance of R is independently selected from the group consisting ofmethyl, ethyl, propyl, butyl, pentyl, fluoride, chloride, bromide,iodide, and an isomer thereof.

5. The method according to any one of paragraphs 1-4, wherein eachinstance of R′ is independently selected from the group consisting ofmethyl, ethyl, propyl, butyl, pentyl, fluoride, chloride, bromide,iodide, and an isomer thereof.

6. The method according to any one of paragraphs 1-5, wherein eachinstance of R and each instance of R′ are independently selected frommethyl, ethyl, n-propyl, iso-propyl, n-butyl, sec-butyl, or tert-butyl.

7. The method according to any one of paragraphs 1-6, wherein n is 0,and wherein the silicon-phosphorous compound has the chemical formula(R_(3-v)H_(v)Si)_(x)PH_(y)R′_(z).

8. The method of paragraph 7, wherein the silicon-phosphorous compoundhas a chemical formula selected from the group consisting of: R₃Si—PR′₂;R₃Si—PHR′; R₃Si—PH₂; R₂HSi—PR′₂; R₂HSi—PHR′; R₂HSi—PH₂; RH₂Si—PR′₂;RH₂Si—PHR′; RH₂Si—PH₂; H₃Si—PR′₂; H₃Si—PHR′; and H₃Si—PH₂.

9. The method of paragraph 7, wherein the silicon-phosphorous compoundis selected from the group consisting of: H₃Si—PH₂; Me₂HSi—PH₂;tBu₂HSi—PH₂; H₃Si—PMe₂; H₃Si—PEt₂; H₃Si—P(iPr)₂; and H₃Si—P(tBu)₂.

10. The method of paragraph 7, wherein the silicon-phosphorous compoundis selected from the group consisting of: Cl₃Si—PMe₂; Cl₃Si—PEt₂;Cl₃Si—P(iPr)₂; Cl₃Si—P(tBu)₂; Br₃Si—PMe₂; Br₃Si—PEt₂; Br₃Si—P(iPr)₂; andBr₃Si—P(tBu)₂.

11. The method according to any one of paragraphs 1-6, wherein n is 1,and wherein the silicon-phosphorous compound has the chemical formula(R_(3-v) H_(v)Si)—(R_(2-w)H_(w)Si)—PH_(y)R′_(z).

12. The method of paragraph 11, wherein the silicon-phosphorous compoundhas a chemical formula selected from the group consisting of:R₃Si—(R₂Si)—PR′₂; R₃Si—(R₂Si)—PHR′; R₃Si—(R₂Si)—PH₂; R₂HSi—(R₂Si)—PR′₂;R₂HSi—(R₂Si)—PHR′; R₂HSi—(R₂Si)—PH₂; RH₂Si—(R₂Si)—PR′₂;RH₂Si—(R₂Si)—PHR′; RH₂Si₄R₂Si)—PH₂, H₃Si—(R₂Si)—PR′₂; H₃Si—(R₂Si)—PHR′;H₃Si—(R₂Si)—PH₂; R₃Si—(H₂Si)—PR′₂; R₃Si—(H₂Si)—PHR′; R₃Si—(H₂Si)—PH₂;R₂HSi—(H₂Si)—PR′₂; R₂HSi—(H₂Si)—PHR′; R₂HSi₄H₂Si)—PH₂,RH₂Si—(H₂Si)—PR′₂; RH₂Si—(H₂Si)—PHR′; RH₂Si—(H₂Si)—PH₂;H₃Si—(H₂Si)—PR′₂; H₃Si—(H₂Si)—PHR′; H₃Si—(H₂Si)—PH₂; R₃Si—(RHSi)—PR′₂;R₃Si—(RHSi)—PHR′; R₃Si—(RHSi)—PH₂; R₂HSi—(RHSi)—PR′₂; R₂HSi—(RHSi)—PHR′;R₂HSi—(RHSi)—PH₂; RH₂Si—(RHSi)—PR′₂; RH₂Si—(RHSi)—PHR′;RH₂Si—(RHSi)—PH₂; H₃Si—(RHSi)—PR′₂; H₃Si—(RHSi)—PHR′; andH₃Si—(RHSi)—PH₂.

13. The method according to any one of paragraphs 1-6, wherein x is 2; yis 0 or 1; and z is 0 or 1, where y+z=1, and wherein thesilicon-phosphorous compound has the chemical formula[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]₂PH_(y)R′_(z).

14. The method according to any one of paragraphs 1-6, wherein x is 3; yis 0; and z is 0, and wherein the silicon-phosphorous compound has thechemical formula [(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]₃P.

15. The method according to any one of paragraphs 1-14, wherein thesubstrate is in a processing chamber during the deposition process, andwherein the silicon-phosphorous compound is produced in-situ theprocessing chamber prior to or during the deposition process.

16. The method according to any one of paragraphs 1-15, wherein thedeposition process is an epitaxial process, an atomic layer deposition(ALD) process, a chemical vapor deposition (CVD) process, or a plasmaprocess thereof.

17. The method according to any one of paragraphs 1-16, wherein thedeposition gas further comprises one or more of a silicon source gas, aphosphorous source gas, an arsenic source gas, an antimony source gas,an etchant gas, a carrier gas, or any combination thereof.

18. The method of paragraph 17, wherein the silicon source gas comprisessilane, disilane, trisilane, tetrasilane, chlorosilane, dichlorosilane,trichlorosilane, tetrachlorosilane, hexachlorodisilane, tetraethylorthosilicate (TEOS), or any combination thereof.

19. The method of paragraph 17, wherein the phosphorous source gascomprises phosphine, trichlorophosphine, methylphosphine,ethylphosphine, propylphosphine, butylphosphine, dimethylphosphine,diethylphosphine, dipropylphosphine, dibutylphosphine,trimethylphosphine, triethylphosphine, tripropylphosphine,tributylphosphine, alkyl isomers thereof, adducts thereof, or anycombination thereof.

20. The method of paragraph 17, wherein the arsenic source gas comprisesarsine, methylarsine, ethylarsine, propylarsine, butylarsine,dimethylarsine, diethylarsine, dipropylarsine, dibutylarsine,trimethylarsine, triethylarsine, tripropylarsine, tributylarsine, alkylisomers thereof, adducts thereof, or any combination thereof.

21. The method of paragraph 17, wherein the etchant gas compriseschlorine (Cl₂), hydrogen chloride, an alkylchloride, or any combinationsthereof.

22. The method of paragraph 17, wherein the carrier gas compriseshydrogen (H₂), nitrogen (N₂), forming gas, a mixture of hydrogen andnitrogen, argon, helium, or any combination thereof.

23. The method according to any one of paragraphs 1-22, wherein thesubstrate is in a processing chamber during the deposition process, thesubstrate is heated to a temperature of about 400° C. to about 700° C.during the deposition process, and the processing chamber is maintainedat a pressure of about 20 Torr to about 600 Torr during the depositionprocess.

24. The method according to any one of paragraphs 1-23, wherein thedeposition process is an epitaxial process.

25. The method according to any one of paragraphs 1-24, wherein thesubstrate is in a processing chamber during the deposition process, thesubstrate is heated to a temperature of about 100° C. to less than 400°C. during the deposition process, and the processing chamber ismaintained at a pressure of about 100 Torr or less during the depositionprocess.

26. The method according to any one of paragraphs 1-25, wherein thedeposition process is an atomic layer deposition process.

27. The method according to any one of paragraphs 1-26, wherein thesilicon-phosphorous material comprises silicon, phosphorous, oxygen,carbon, and nitrogen.

28. The method according to any one of paragraphs 1-27, wherein the filmcomprising the silicon-phosphorous material is deposited on a featuredisposed on the substrate, and wherein the feature is a source-drain ora source-drain extension.

29. The method according to any one of paragraphs 1-28, wherein thesilicon-phosphorous material comprises a phosphorous concentration in arange from about 1×10²⁰ atoms/cm³ to about 1×10²² atoms/cm³.

30. The method according to any one of paragraphs 1-29, wherein the filmcomprising the silicon-phosphorous material is deposited at a rate in arange from about 10 Å/min to about 2,000 Å/min.

31. A computer program product residing on a computer-readable medium,the computer program product comprising instructions for causing aprocessor to perform the method according to any one of paragraphs 1-30.

32. A computer program product residing on a computer-readable medium,the computer program product comprising instructions for causing aprocessor to perform a method for forming a silicon-phosphorous materialon a substrate, the method comprises: exposing the substrate to adeposition gas comprising a silicon-phosphorous compound during adeposition process; and depositing a film comprising thesilicon-phosphorous material on the substrate, wherein thesilicon-phosphorous compound has the chemical formula:[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z), and wherein:each instance of R is independently an alkyl or a halogen; each instanceof R′ is independently an alkyl or a halogen; n is 0, 1, or 2; v is 0,1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; and z is0, 1, or 2; wherein x+y+z=3.

While the foregoing is directed to embodiments of the disclosure, otherand further embodiments may be devised without departing from the basicscope thereof, and the scope thereof is determined by the claims thatfollow. All documents described herein are incorporated by referenceherein, including any priority documents and/or testing procedures tothe extent they are not inconsistent with this text. As is apparent fromthe foregoing general description and the specific embodiments, whileforms of the present disclosure have been illustrated and described,various modifications can be made without departing from the spirit andscope of the present disclosure. Accordingly, it is not intended thatthe present disclosure be limited thereby. Likewise, the term“comprising” is considered synonymous with the term “including” forpurposes of United States law. Likewise whenever a composition, anelement or a group of elements is preceded with the transitional phrase“comprising”, it is understood that we also contemplate the samecomposition or group of elements with transitional phrases “consistingessentially of,” “consisting of”, “selected from the group of consistingof,” or “is” preceding the recitation of the composition, element, orelements and vice versa.

As described and discussed herein, the alkyl groups can have thefollowing nomenclatures: methyl (CH₃— or Me), ethyl (CH₃CH₂— or Et),propyl (Pr) can be normal-propyl (CH₃CH₂CH₂— or nPr) or iso-propyl((CH₃)₂CH— or iPr), butyl (Bu) can be normal-butyl (CH₃CH₂CH₂CH₂— ornBu), sec-butyl (CH₃CH₂(CH₃)CH— or sBu), iso-butyl ((CH₃)₂CHCH₂— oriBu), or tert-butyl ((CH₃)₃C— or tBu).

Certain embodiments and features have been described using a set ofnumerical upper limits and a set of numerical lower limits. It should beappreciated that ranges including the combination of any two values,e.g., the combination of any lower value with any upper value, thecombination of any two lower values, and/or the combination of any twoupper values are contemplated unless otherwise indicated. Certain lowerlimits, upper limits and ranges appear in one or more claims below.

What is claimed is:
 1. A method for forming a silicon-phosphorousmaterial on a substrate, comprising: exposing the substrate to adeposition gas comprising a silicon-phosphorous compound during adeposition process; and depositing a film comprising thesilicon-phosphorous material on the substrate, wherein thesilicon-phosphorous compound has the chemical formula:[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z), and wherein:each instance of R is independently an alkyl or a halogen; each instanceof R′ is independently an alkyl or a halogen; n is 0, 1, or 2; v is 0,1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; and z is0, 1, or 2; wherein x+y+z=3.
 2. The method of claim 1, wherein eachinstance of R and each instance of R′ are independently selected fromthe group consisting of methyl, ethyl, propyl, butyl, pentyl, fluoride,chloride, bromide, iodide, and an isomer thereof.
 3. The method of claim1, wherein n is 0, and wherein the silicon-phosphorous compound has thechemical formula (R_(3-v)H_(v)Si)_(x)PH_(y)R′_(z).
 4. The method ofclaim 3, wherein the silicon-phosphorous compound has a chemical formulaselected from the group consisting of: R₃Si—PR′₂; R₃Si—PHR′; R₃Si—PH₂;R₂HSi—PR′₂; R₂HSi—PHR′; R₂HSi—PH₂; RH₂Si—PR′₂; RH₂Si—PHR′; RH₂Si—PH₂,H₃Si—PR′₂; H₃Si—PHR′; and H₃Si—PH₂.
 5. The method of claim 3, whereinthe silicon-phosphorous compound is selected from the group consistingof: H₃Si—PH₂; Me₂HSi—PH₂; tBu₂HSi—PH₂; H₃Si—PMe₂; H₃Si—PEt₂;H₃Si—P(iPr)₂; H₃Si—P(tBu)₂; Cl₃Si—PMe₂; Cl₃Si—PEt₂; Cl₃Si—P(iPr)₂;Cl₃Si—P(tBu)₂, Br₃Si—PMe₂; Br₃Si—PEt₂; Br₃Si—P(iPr)₂; and Br₃Si—P(tBu)₂.6. The method of claim 1, wherein n is 1, and wherein thesilicon-phosphorous compound has the chemical formula(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)—PH_(y)R′_(z).
 7. The method of claim6, wherein the silicon-phosphorous compound has a chemical formulaselected from the group consisting of: R₃Si—(R₂Si)—PR′₂;R₃Si—(R₂Si)—PHR′; R₃Si—(R₂Si)—PH₂; R₂HSi—(R₂Si)—PR′₂; R₂HSi—(R₂Si)—PHR′;R₂HSi—(R₂Si)—PH₂; RH₂Si—(R₂Si)—PR′₂; RH₂Si—(R₂Si)—PHR′;RH₂Si—(R₂Si)—PH₂; H₃Si—(R₂Si)—PR′₂; H₃Si—(R₂Si)—PHR′; H₃Si—(R₂Si)—PH₂;R₃Si—(H₂Si)—PR′₂; R₃Si—(H₂Si)—PHR′; R₃Si—(H₂Si)—PH₂; R₂HSi—(H₂Si)—PR′₂;R₂HSi—(H₂Si)—PHR′; R₂HSi—(H₂Si)—PH₂; RH₂Si—(H₂Si)—PR′₂;RH₂Si—(H₂Si)—PHR′; RH₂Si—(H₂Si)—PH₂; H₃Si—(H₂Si)—PR′₂; H₃Si—(H₂Si)—PHR′;H₃Si—(H₂Si)—PH₂; R₃Si—(RHSi)—PR′₂; R₃Si—(RHSi)—PHR′; R₃Si—(RHSi)—PH₂;R₂HSi—(RHSi)—PR′₂; R₂HSi—(RHSi)—PHR′; R₂HSi—(RHSi)—PH₂;RH₂Si—(RHSi)—PR′₂; RH₂Si—(RHSi)—PHR′; RH₂Si—(RHSi)—PH₂;H₃Si—(RHSi)—PR′₂; H₃Si—(RHSi)—PHR′; and H₃Si—(RHSi)—PH₂.
 8. The methodof claim 1, wherein x is 2; y is 0 or 1; and z is 0 or 1, where y+z=1,and wherein the silicon-phosphorous compound has the chemical formula[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]₂PH_(y)R′_(z).
 9. The method ofclaim 1, wherein x is 3; y is 0; and z is 0, and wherein thesilicon-phosphorous compound has the chemical formula[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]₃P.
 10. The method of claim 1,wherein the substrate is in a processing chamber during the depositionprocess, and wherein the silicon-phosphorous compound is producedin-situ the processing chamber prior to or during the depositionprocess.
 11. The method of claim 1, wherein the deposition gas furthercomprises one or more of a silicon source gas, a phosphorous source gas,an arsenic source gas, an antimony source gas, an etchant gas, a carriergas, or any combination thereof.
 12. The method of claim 11, wherein thesilicon source gas comprises silane, disilane, trisilane, tetrasilane,chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane,hexachlorodisilane, tetraethyl orthosilicate (TEOS), or any combinationthereof.
 13. The method of claim 11, wherein: the phosphorous source gascomprises phosphine, trichlorophosphine, methylphosphine,ethylphosphine, propylphosphine, butylphosphine, dimethylphosphine,diethylphosphine, dipropylphosphine, dibutylphosphine,trimethylphosphine, triethylphosphine, tripropylphosphine,tributylphosphine, alkyl isomers thereof, adducts thereof, or anycombination thereof; the arsenic source gas comprises arsine,methylarsine, ethylarsine, propylarsine, butylarsine, dimethylarsine,diethylarsine, dipropylarsine, dibutylarsine, trimethylarsine,triethylarsine, tripropylarsine, tributylarsine, alkyl isomers thereof,adducts thereof, or any combination thereof; the etchant gas compriseschlorine (Cl₂), hydrogen chloride, an alkylchloride, or any combinationsthereof; and the carrier gas comprises hydrogen (H₂), nitrogen (N₂),forming gas, a mixture of hydrogen and nitrogen, argon, helium, or anycombination thereof.
 14. The method of claim 1, wherein the depositionprocess is an epitaxial process, wherein the substrate is in aprocessing chamber during the epitaxial process, the substrate is heatedto a temperature of about 400° C. to about 700° C. during the epitaxialprocess, and the processing chamber is maintained at a pressure of about20 Torr to about 600 Torr during the epitaxial process.
 15. The methodof claim 1, wherein the deposition process is an atomic layer deposition(ALD) process, wherein the substrate is in a processing chamber duringthe ALD process, the substrate is heated to a temperature of about 100°C. to less than 400° C. during the ALD process, and the processingchamber is maintained at a pressure of about 100 Torr or less during theALD process.
 16. The method of claim 15, wherein the silicon-phosphorousmaterial comprises silicon, phosphorous, oxygen, carbon, and nitrogen.17. The method of claim 1, wherein the film comprising thesilicon-phosphorous material is deposited on a feature disposed on thesubstrate, wherein the feature is a source-drain or a source-drainextension, and wherein the silicon-phosphorous material comprises aphosphorous concentration in a range from about 1×10²⁰ atoms/cm³ toabout 1×10²² atoms/cm³.
 18. A computer program product residing on acomputer-readable medium, the computer program product comprisinginstructions for causing a processor to perform the method according toclaim
 1. 19. A method for forming a silicon-phosphorous material on asubstrate, comprising: exposing the substrate in a processing chamber toa deposition gas comprising a silicon-phosphorous compound during anepitaxial process; and selectively depositing a film comprising thesilicon-phosphorous material on the substrate, wherein the substrate isheated to a temperature of about 400° C. to about 700° C., wherein theprocessing chamber is maintained at a pressure of about 20 Torr to about600 Torr; wherein the silicon-phosphorous compound has the chemicalformula:[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z), and wherein:each instance of R is independently an alkyl or a halogen; each instanceof R′ is independently an alkyl or a halogen; n is 0, 1, or 2; v is 0,1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; and z is0, 1, or 2; wherein x+y+z=3.
 20. A method for forming asilicon-phosphorous material on a substrate, comprising: exposing thesubstrate in a processing chamber to a deposition gas comprising asilicon-phosphorous compound during an atomic layer deposition process;and depositing a film comprising the silicon-phosphorous material on thesubstrate, wherein the substrate is heated to a temperature of about100° C. to less than 400° C., wherein the processing chamber ismaintained at a pressure of about 100 Torr or less; wherein thesilicon-phosphorous compound has the chemical formula:[(R_(3-v)H_(v)Si)—(R_(2-w)H_(w)Si)_(n)]_(x)PH_(y)R′_(z), and wherein:each instance of R is independently an alkyl or a halogen; each instanceof R′ is independently an alkyl or a halogen; n is 0, 1, or 2; v is 0,1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; and z is0, 1, or 2; wherein x+y+z=3.